Skip to main content
Skip to main menu Skip to spotlight region Skip to secondary region Skip to UGA region Skip to Tertiary region Skip to Quaternary region Skip to unit footer


Electrochemical deposition of chalcogenide semiconductor films: InSe and GeTe

Peter Sisk
Peter Sisk
Chemistry Building, Room 400
Analytical Seminar

Electrodeposition is a low cost, room temperature method for the deposition of semiconductor thin films. Using Electrochemical Atomic Layer Deposition (EALD) and Potential Pulse Atomic Layer Deposition (PPALD), films with atomic layer control can be achieved. By reducing one monolayer of one element onto the substrate, followed by a molecular layer of a second element, films of varying thicknesses can be made. These films can be used in such applications as photoanodes in solar cells or as a phase change material in computer memory. The stoichiometry and smoothness of the films is controlled by the pH of the solution, concentration of precursor, and electrochemical potential in relation to the Nernst equation. Indium Selenide is a 2D layered chalcogenide material with 2 main stoichiometries: InSe and In2Se3, which have different bandgaps. By controlling the electrochemical potentials at which In and Se are deposited and stripped in our sequence, the stoichiometry can be engineered using PPALD. The resulting films were extremely smooth and homogenous with photoactive properties that might make it attractive as a photoanode in a photoelectrochemical cell. Germanium Telluride is another layered chalcogenide, but with promise as a phase change memory material. Due to the small electrochemical potential ranges with which Ge and Te overlap to deposit and strip, fine control of deposition potential and time are necessary. Using feedback from the voltammetry stripping curves, we can start to optimize the conditions for the deposition sequence.


1. J. Am. Chem. Soc. 2011, 133, 21, 8199-8204

2. J Phys. Checm. C 2016, 120, 29, 16162-16167

3. J Phys. Chem. C 2012, 116, 15801-15811

Support Us

We appreciate your financial support. Your gift is important to us and helps support critical opportunities for students and faculty alike, including lectures, travel support, and any number of educational events that augment the classroom experience. Click here to learn more about giving.

Every dollar given has a direct impact upon our students and faculty.

Got More Questions?

Undergraduate inquiries: 

Registration and credit

AP Credit, Section Changes, Overrides,

Graduate inquiries:

Contact Us!

Assistant to the Department Head: Donna Spotts, 706-542-1919 

Main office phone: 706-542-1919 

Main Email:

Head of Chemistry: Prof. Jason Locklin